FBH-Kolloquium: Growth of homoepitaxial β-Ga2O3 layers by MOVPE for power electronics applications

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FBH-Kolloquium: Growth of homoepitaxial β-Ga2O3 layers by MOVPE for power electronics applications

Friday, 17. February 2017 // 13.30

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik

Gustav-Kirchhoff-Straße 4, 12489 Berlin

Referent: Dr. Michele Baldini, Institut für Kristallzüchtung, Berlin