08.10.12 / 11:00-18:30

Workshop on "Novel Semiconducting Oxides"

Veranstalter:	Leibniz-Institut für Kristallzüchtung
Ort:	Rudower Chaussee 26, 12489 Berlin

There is currently great interest in the exploration and development of semiconducting binary oxides (In2O3, Ga2O3, SnO2) as new wide-band-gap electronic materials. Oxides have many outstanding properties that, when combined with semiconducting behaviour, can give rise to unprecedented performance and applications. The exploration of oxides from the perspective of semiconductor science and technology offers exciting opportunities for uncovering new physics as well as developing devices with novel functionality.
In the frame of a joint DFG-NSF project, the Leibniz Institute for Crystal Growth (IKZ), the Institute of Physics of the Humboldt University and the Dept. of Materials of the University of California Santa Barbara have undertaken a great effort in order to develop high-quality single crystals and epilayers of such binary oxides and to acquire a deeper knowledge of their fundamental physical characteristics. In this workshop an overview of the obtained results will be presented together with some keynote lectures on applications of the semiconducting oxides. A main purpose of the Workshop is to strengthen the activity on these novel compounds in the area of Berlin by bringing together research groups with complementary expertise and creating a synergetic interdisciplinary team (Forschergruppe).

We would be very glad to personally welcome you at this Workshop.

Prof. Roberto Fornari          Prof. Recardo Manzke
IKZ-Berlin                            HU-Institute of Physics

Workshop Programme
Monday 8 October 2012

(Open to public)

From 10.00 am Admission in Schrödinger Zentrum, Room 0´101
10.45 - 11.00 R. Fornari, R. Manzke – Welcome and Introduction
11.00 -12.00 M. Higashiwaki, Nat. Institute of Information and Communication Technology, Japan Potential applications of wide bandgap semiconducting oxides
12.00 – 13.00 R. Fornari, Leibniz Institute for Crystal Growth, Berlin - Development of growth processes for high-quality In2O3 and Ga2O3 single crystals
13.00 – 14.00 Lunch break
14.00 – 15.00 J. Speck, Dept. of Materials, Univ. California Santa Barbara, USA - State-of-the art of epitaxial In2O3 and Ga2O3
15.00 – 16.00 R. Manzke, Institute of Physics, Humboldt University, Berlin - Electronic properties of In2O3 and Ga2O3 and characteristics of Schottky diodes fabricated on Ga2O3
16.00 – 16.15 Coffee Break
16.15 – 17.15 A. Schleife, Lawrence Livermore National Laboratory, USA - Theoretical prediction of physical properties of semiconducting oxides via ab-initio computation
17.15 – 18.15 M. Albrecht, Leibniz Institute for Crystal Growth, Berlin - Intrinsic atomic defects in group III sesquioxides studied by aberration corrected high resolution TEM
18.15 – 18.30 Final remarks

Tuesday 9 October 2012
(Participation restricted to invited scientists)
Schrödinger Zentrum, Room 0´101