08.10.12 / 11:00-18:30
Workshop on "Novel Semiconducting Oxides"
||Leibniz-Institut für Kristallzüchtung
||Rudower Chaussee 26, 12489 Berlin
There is currently great interest in the exploration and development of semiconducting binary oxides (In2O3, Ga2O3, SnO2) as new wide-band-gap electronic materials. Oxides have many outstanding properties that, when combined with semiconducting behaviour, can give rise to unprecedented performance and applications. The exploration of oxides from the perspective of semiconductor science and technology offers exciting opportunities for uncovering new physics as well as developing devices with novel functionality.
In the frame of a joint DFG-NSF project, the Leibniz Institute for Crystal Growth (IKZ), the Institute of Physics of the Humboldt University and the Dept. of Materials of the University of California Santa Barbara have undertaken a great effort in order to develop high-quality single crystals and epilayers of such binary oxides and to acquire a deeper knowledge of their fundamental physical characteristics. In this workshop an overview of the obtained results will be presented together with some keynote lectures on applications of the semiconducting oxides. A main purpose of the Workshop is to strengthen the activity on these novel compounds in the area of Berlin by bringing together research groups with complementary expertise and creating a synergetic interdisciplinary team (Forschergruppe).
We would be very glad to personally welcome you at this Workshop.
Prof. Roberto Fornari Prof. Recardo Manzke
IKZ-Berlin HU-Institute of Physics Workshop Programme
Monday 8 October 2012
(Open to public)
Tuesday 9 October 2012
- From 10.00 am Admission in Schrödinger Zentrum, Room 0´101
- 10.45 - 11.00 R. Fornari, R. Manzke – Welcome and Introduction
- 11.00 -12.00 M. Higashiwaki, Nat. Institute of Information and Communication Technology, Japan Potential applications of wide bandgap semiconducting oxides
- 12.00 – 13.00 R. Fornari, Leibniz Institute for Crystal Growth, Berlin - Development of growth processes for high-quality In2O3 and Ga2O3 single crystals
- 13.00 – 14.00 Lunch break
- 14.00 – 15.00 J. Speck, Dept. of Materials, Univ. California Santa Barbara, USA - State-of-the art of epitaxial In2O3 and Ga2O3
- 15.00 – 16.00 R. Manzke, Institute of Physics, Humboldt University, Berlin - Electronic properties of In2O3 and Ga2O3 and characteristics of Schottky diodes fabricated on Ga2O3
- 16.00 – 16.15 Coffee Break
- 16.15 – 17.15 A. Schleife, Lawrence Livermore National Laboratory, USA - Theoretical prediction of physical properties of semiconducting oxides via ab-initio computation
- 17.15 – 18.15 M. Albrecht, Leibniz Institute for Crystal Growth, Berlin - Intrinsic atomic defects in group III sesquioxides studied by aberration corrected high resolution TEM
- 18.15 – 18.30 Final remarks
(Participation restricted to invited scientists)
Schrödinger Zentrum, Room 0´101
Eine Einladung zu diesem Termin als E-Mail verschicken.
- From 9.00 to 13.00: Discussion on actual scientific issues in the area of Novel Semiconducting Oxides and set up of a “Forschergruppe”