HIOS Colloquium: Molecular Dopants and other Tools to Control Metal Halide Perovskite Films and Interfaces
Montag, 27. Februar 2023 // 15.15
Collaborative Research Centre 951, HU Berlin
Rudower Chaussee 26,
12489 Berlin
Erwin-Schrödinger-Zentrum, Room 0'119
Antoine Kahn
Department of Electrical and Computer Engineering, Princeton University, Princeton, USA
This talk outlines recent work done in our lab on the control of metal halide perovskite (MHP) thin film surfaces and interfaces using various tools. We first look at fundamental studies of electronic structure performed on systems modified with organic molecular dopants. We justify the effectiveness of interface doping, based on the ability to move the Fermi level across the gap of the perovskite. We review work on molecular oxidants and reductants deposited on MHP surfaces and the impact of these dopants on energy level alignment with substrate and charge transport layers, as well as on device performance. We also look at recent work on bulk p-doping of the perovskite layer with molecular dopants. We then turn to two methods aimed at enhancing MHP film stability: the introduction of a disulfide chemical recycler, to mitigate the loss of halide and formation of Pb0, and the use of an ultra-thin NyN layer to passivate the NiOx surface and the NiOx-perovskite film interface.
