DRIP XVII: 18th Conference on Defects-Recognition, Imaging and Physics in Semiconductors

DRIP XVII: 18th Conference on Defects-Recognition, Imaging and Physics in Semiconductors

Sonntag, 08. September 2019 - Donnerstag, 12. September 2019

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Leibniz Institute for Crystal Growth

DRIP Conference

The conference will focus on the recent advances in the study of crystal defects in semiconducting materials, such as wide band-gap materials (SiC, group-III nitrides, ZnO), group IV semiconductors (Si, Ge, diamond), III-V compound semiconductors (GaAs, InP, ternary and diluted magnetic materials), materials for oxide electronics, photovoltaics, novel device structures and novel 2D semiconductors.

The DRIP conference series provides an outstanding international forum to present and discuss the correlation between crystal defects, device fabrication and degradation. The latest developments in the characterization, imaging and spectroscopic techniques and instruments will also be discussed.

Online registration as well as the submission of abstracts will be available in spring 2019.

We look forward to receiving your contributions and seeing you in Berlin!

DRIPXVIII_Flyer_Web.pdf