Physik-Kolloquium: Solid-state electrochemical thermal transistors
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Institut für Physik der HU
Newtonstraße 15,
12489 Berlin
Lise-Meitner-Haus, Christian-Gerthsen-Hörsaal
Prof. Hiromichi Ohta, Ph.D. (RIES, Hokkaido University)
Thermal transistors are devices that can electrically switch “heat flow” on and off, like a semiconductor transistor that switches “electric current” on and off. We can reuse waste heat exhausted to the environment using devices composed of thermal transistors such as thermal shutters and thermal displays. Although several thermal transistors have been demonstrated thus far, the use of liquid electrolytes (or ionic liquids or ion gels) may limit the application from the viewpoint of reliability or liquid leakage. Very recently, we demonstrated a solid-state thermal transistor that can electrochemically control the heat flow with an on-to-off ratio of the thermal conductivity (κ) of ~4 without using any liquid.[1] The thermal transistor is a multilayer film composed of an upper electrode (Pt), strontium cobaltite (SrCoOx), solid electrolyte (YSZ), and bottom electrode (Pt). An electrochemical redox treatment at 280 °C in air repeatedly modulates the crystal structure and κ of the SrCoOx layer. The fully oxidized perovskite-structured SrCoO3 layer shows a high κ ~3.8 W m−1 K−1, whereas the fully reduced defect perovskite-structured SrCoO2 layer shows a low κ ~0.95 W m−1 K−1. We believe that all-solid-state electrochemical thermal transistors have the potential to become next-generation devices for future thermal management technology, and we are currently working on improving their characteristics.
[1] Q. Yang, H. Ohta et al., Adv. Funct. Mater.33, 2214939 (2023).
Das Kolloquium wird „hybrid“ durchgeführt, kann also sowohl im Hörsaal als auch über Zoom verfolgt werden.
Anmeldedaten:
Zoom-Meeting
Meeting-ID: 645 6733 6962
Passwort: 607723